Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
US7326956B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2004 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Oct 15, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.