Gallium nitride based high-electron mobility devices
US7326971B2 · kind B2 · utility
76Cited by
14References
19Claims
0Family size
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Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Feb 5, 2008 |
| Priority date | — |
| Expiry date | Jun 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.