Method for fabricating metallic bit-line contacts

US7326985B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Staub · Dresden, DE
• Jurgen Amon · Dresden, DE
• Norbert Urbansky · Dresden, DE

Key dates

• Filing date: Oct 23, 2003
• Grant date: Feb 5, 2008
• Expiry date: Oct 23, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/905
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A memory cell and method of forming the same is provided. To make contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer, a contact hole is filled with a metal or a metal alloy. A liner layer may be introduced between the semiconductor substrate and the metal filling. The semiconductor substrate has a doped region in the contact hole.