Structure and method for bonding to copper interconnect structures
US7328830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Jan 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit structure and a method for fabricating the structure. The method comprises forming a copper bond pad for attaching the integrated circuit to a package. Copper oxide is removed from the pad by reduction in a hydrogen ion atmosphere. For attaching the integrated circuit to a bump-bonding package an under-bump metallization layer is formed over the reduced copper pad and a solder bump formed thereover. The process can also be employed in a wire bonding process by forming an aluminum layer overlying the cleaned copper pad. The structure of the present invention comprises a copper pad formed in a substrate. A passivation layer defining an opening therein overlies the copper pad. A under-bump metallization layer is disposed in the opening and a solder bump overlies the metallization layer. Alternatively, the structure further comprises an aluminum pad disposed overlying the reduced copper pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.