Method for analyzing the structure of deep trench capacitors and a preparation method thereof
US7329550B2 · kind B2 · utility
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5References
8Claims
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Key dates
| Filing date | Jan 10, 2005 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Feb 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/24
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for analyzing the structure of deep trench capacitors and a preparation method thereof are described. A protective layer is formed on a selected inspection area. Overlying circuit layers and an upper portion of a substrate, surrounding the selected inspection area, of the die are removed. A chemical etchant is used to selectively remove the exposed substrate material to uncover deep trench capacitors. A structural analysis of those deep trench capacitors is then performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.