Forming a reticle for extreme ultraviolet radiation and structures formed thereby
US7329588B2 · kind B2 · utility
0Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2004 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a plurality of openings in a portion of a first side of a substrate, bonding a first silicon layer of a silicon on insulator wafer to the first side of the substrate, wherein the silicon on insulator wafer comprises the first silicon layer disposed on an insulator layer disposed on a second silicon layer, forming a plurality of support structures by removing a portion of a second side of the substrate, removing the second silicon layer and removing the insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.