Semiconductor structure formed using a sacrificial structure
US7329605B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2005 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Dec 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a buried conductive structure in a semiconductor device includes the steps of forming a first insulating layer on a semiconductor layer; forming a sacrificial structure on at least a portion of the first insulating layer; forming a second insulating layer on at least a portion of the sacrificial structure; forming at least one opening through the second insulating layer to at least partially expose the sacrificial structure; substantially removing the sacrificial structure, leaving a cavity; and substantially filling the cavity and the at least one opening with a conductive material. The sacrificial structure may be substantially removed by etching the sacrificial structure using an isotropic etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.