Method of processing a substrate
US7329608B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2004 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Mar 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/851
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.