Nitride semiconductor device
US7329909B2 · kind B2 · utility
8Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Jul 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-layered structure in which a p-3C-SiC layer 102 is formed above a p-Si substrate 101 is formed, above which an I-GaN layer (channel layer) 103, an n-AlGaN layer (barrier layer) 104 are formed. A source electrode 201, a drain electrode 202, and a gate electrode 203 are formed above the n-AlGaN layer 104. The source electrode 201 and the drain electrode 202 form an ohmic contact with the n-AlGaN layer 104. The gate electrode 203 forms a Schottky junction with the n-AlGaN layer 104.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.