Metal-insulator-metal (MIM) capacitor
US7329955B2 · kind B2 · utility
12Cited by
29References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2006 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Mar 2, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal-insulator-metal (MIM) capacitor is made according to a copper dual-damascene process. A first copper or copper alloy metal layer if formed on a substrate. A portion of the first metal layer is utilized as the lower plate of the MIM capacitor. An etch stop dielectric layer is used during etching of subsequent layers. A portion of an etch stop layer is not removed and is utilized as the insulator for the MIM capacitor. A second copper or copper alloy metal layer is later formed on the substrate. A portion of the second metal layer is utilized as the upper plate of the MIM capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.