Monolithically integrated power amplifier device
US7330077B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 28, 2006 |
| Grant date | Feb 12, 2008 |
| Priority date | — |
| Expiry date | Nov 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A monolithically integrated microwave frequency high power amplifier device comprises a plurality of transistors connected in a load modulation configuration wherein the number of the transistors that is operational depends on the drive level. The transistors have each a finger type layout, where fingers from different ones of the transistors are interleaved. The sources of the plurality of transistors are typically interconnected, whereas the gates of the transistors have separate connections for connection to separate package leads. Similarly, the drains of the transistors have separate connections for connection to separate package leads. Advantageously, an LC-based passive network performs a power combining operation of the amplifier device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.