Method of forming a semiconductor device having bonding pad of the second chip thinner than bonding pad of the first chip
US7331737B2 · kind B2 · utility
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2References
8Claims
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Assignee
Inventor
Key dates
| Filing date | May 22, 2007 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | May 22, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T408/5638
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a semiconductor device that enables high integration degree, and a manufacturing method therefor. A multi-chip module according to an embodiment of the present invention includes: a first semiconductor chip having a first bonding pad; a second semiconductor chip having a second bonding pad thinner than the first bonding pad; and a bonding wire connected with each of the first bonding pad and the second bonding pad, the first bonding pad being connected with a first bond side end portion of the bonding wire and the second bonding pad being connected with a second bond side end portion of the bonding wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.