Semiconductor device with recessed trench and method of fabricating the same
US7332396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2006 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a recessed channel and a method of fabricating the same are provided. The semiconductor device comprises a substrate, a gate, a source, a drain, and a reverse spacer. The substrate comprises a recessed trench. The gate is formed above the recessed trench and extends above the substrate. The gate further comprises a polysilicon layer and a conductive layer; wherein the polysilicon layer is formed inside the recessed trench of the substrate, and the conductive layer is formed above the polysilicon layer and extends above the substrate. Moreover, the width of the conductive layer increases gradually bottom-up. The source and the drain are formed respectively at two sides of the gate. The reverse spacer is formed above the polysilicon layer and against the sidewall of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.