Methods of forming trench isolation layers using high density plasma chemical vapor deposition
US7332409B2 · kind B2 · utility
6Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Aug 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.