Method for forming dual damascenes with supercritical fluid treatments
US7332449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Feb 11, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a damascene structure by providing a single process solution for resist ashing while avoiding and repairing plasma etching damage as well as removing absorbed moisture in the dielectric layer, the method including providing a substrate comprising an uppermost photoresist layer and an opening extending through a thickness of an inter-metal dielectric (IMD) layer to expose an underlying metal region; and, carrying out at least one supercritical fluid treatment comprising supercritical CO2, a first co-solvent, and an additive selected from the group consisting of a metal corrosion inhibitor and a metal anti-oxidation agent to remove the uppermost photoresist layer, as well as including an optional dielectric insulating layer bond forming agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.