Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, writing method for same
US7332781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Feb 19, 2008 |
| Priority date | — |
| Expiry date | Sep 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention concerns a magnetic memory, whereof each memory point consists of a magnetic tunnel junction (60), comprising: a magnetic layer, called trapped layer (61), whereof the magnetization is rigid; a magnetic layer, called free layer (63), whereof the magnetization may be inverse; and insulating layer (62), interposed between the free layer (73) and the trapped layer (71) and respectively in contact with said two layers. The free layer (63) is made with an amorphous or nanocrytallized alloy based on rare earth or a transition metal, the magnetic order of said alloy being of the ferromagnetic type, said free layer having a substantially planar magnetization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.