Low temperature polysilicon thin film transistor and method of manufacturing the same
US7335540B2 · kind B2 · utility
3Cited by
2References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2003 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Sep 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6715
Abstract
A low temperature polysilicon thin film transistor and method of manufacturing the same is provided. The low temperature polysilicon thin film transistor comprises a channel region. Among others, one feature of the method according to the present invention is the performance of a plasma treatment to adjust the threshold voltage of the low temperature polysilicon thin film transistor. Because the threshold voltage of the low temperature polysilicon thin film transistor can be adjusted through a plasma treatment, the manufacturing process is more flexible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.