Manufacturing method of semiconductor device
US7335556B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Nov 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a manufacturing method of a semiconductor device having a semiconductor nonvolatile memory element that is highly reliable and that can increase a variation of a threshold voltage. Further, the present invention provides a method for manufacturing a semiconductor device having a highly reliable semiconductor nonvolatile memory element using a large substrate. According to the present invention, sputtering using, as a target, a solid solution containing silicon that exceeds a solid solubility limit is conducted, so that a conductive film including a conductive layer of a metal element that is a main component of the solid solution and silicon particles is formed, and then, the conductive layer of the metal element is removed to expose silicon particles. Furthermore, a semiconductor device having a semiconductor nonvolatile memory element using the silicon particles as a floating gate electrode is manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.