Sealing porous dielectric material using plasma-induced surface polymerization
US7335586B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Aug 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02203
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for sealing a porous dielectric layer atop a substrate, wherein the dielectric layer is patterned to form at least a trench and at least a via, comprises applying a first plasma to a surface of the dielectric layer to silanolize the surface, treating the surface of the dielectric layer with a silazane to form a monolayer of silane molecules on the surface, and applying a second plasma to the surface of the dielectric layer to induce a polymerization of at least a portion of the silane molecules. The polymerized silane molecules form a cross-linked matrix that builds over a substantial portion of the surface of the dielectric layer and seals at least some of the exposed pores.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.