Method of forming a gate dielectric layer
US7335607B2 · kind B2 · utility
1Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | Jan 20, 2006 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Jan 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a gate dielectric is described. A plasma treatment process is performed to form a dielectric structure on a substrate, wherein the dielectric structure having a graded dielectric constant value that decreases gradually in a direction toward the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.