High-brightness light emitting diode having reflective layer
US7335924B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Jul 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal or a metal nitride for achieving superior reflectivity. The non-alloy ohmic contact layer is interposed between the metallic layer and the light generating structure so as to achieve the required ohmic contact. To prevent the metallic layer from intermixing with the non-alloy ohmic contact layer and to maintain the flatness of the reflective surface of the first metallic layer, an optional dielectric layer is interposed between the metallic layer and the non-alloy ohmic contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.