Lateral silicided diodes

US7335927B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Jeffrey B. Johnson · Hague, US
• Xuefeng Liu · Gaithersburg, US
• Bradley A. Orner · Saint Albans, US
• Robert M. Rassel · Colchester, US
• David C. Sheridan · Williston, US

Key dates

• Filing date: Jan 30, 2006
• Grant date: Feb 26, 2008
• Expiry date: Jul 17, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/23

Abstract

A structure and method of fabricating lateral diodes. The diodes include Schottky diodes and PIN diodes. The method of fabrication includes forming one or more doped regions and more trenches in a silicon substrate and forming metal silicides on the sidewalls of the trenches. The fabrication of lateral diodes may be integrated with the fabrication of field effect, bipolar and SiGe bipolar transistors.