Patent · US Expired

Field effect transistor sensor

US7335942B2 · kind B2 · utility

9Cited by

13References

9Claims

0Family size

Assignee

Universitat Kassel · DE

Inventors

Klaus Edinger · Lorsch, DE
Ivajlo Rangelow · Kassel, DE
Piotr Grabiec · Warszawa, PL
John Melngailis · Newton, US

Key dates

Filing date	Nov 8, 2002
Grant date	Feb 26, 2008
Priority date	—
Expiry date	Nov 8, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG01R33/06
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention relates to a sensor, especially for the probe of a screen probe microscope, for examining probe surfaces (40) or areas adjacent to the sensor, comprising at least one field effect transistor (FET) made of at least one semiconductor material. The invention also relates to a Hall sensor made of at least one semiconductor material for detecting magnetic fields and whose lateral resolution capacity can be electrically adjusted, in addition to a semiconductor electrode (28) whose electrode surface can be electrically adjusted.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.