Method of monitoring introduction of interfacial species
US7335969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Aug 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.