Semiconductor device
US7336526B2 · kind B2 · utility
97Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2006 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Feb 17, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores information depending on a change in its state caused by applied heat, as well as an input/output circuit, and to turn off the word line until the power supply circuit is activated. According to the present invention, unwanted current flow to the element can be prevented and thereby data destruction can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.