Pattern correcting method, mask making method, method of manufacturing semiconductor device, pattern correction system, and computer-readable recording medium having pattern correction program recorded therein
US7337426B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2005 |
| Grant date | Feb 26, 2008 |
| Priority date | — |
| Expiry date | Dec 20, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a pattern correcting method comprising extracting a correction pattern, at least the one or more correction patterns being included in a first design pattern formed on a substrate, acquiring layout information from the first design pattern, the layout information affecting a finished plane shape of the correction pattern on the substrate, determining contents of correction onto the correction pattern on the basis of the layout information, generating a design pattern-2 corresponding to the layout information so as to be associated with the correction pattern, and correcting the correction pattern in accordance with the contents of correction corresponding to the design pattern-2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.