Plasma processing device
US7338576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2002 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Mar 7, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32688
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.