Vapor HF etch process mask and method
US7338614B2 · kind B2 · utility
39Cited by
9References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 4, 2006 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Apr 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of processing a semiconductor wafer provides a wafer, and then forms an organic mask on at least a portion of the wafer. The method then applies a vapor etching process to the wafer through holes in the organic mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.