Method for manufacturing a semiconductor device
US7338876B2 · kind B2 · utility
1Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2005 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Mar 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor memory device includes the steps of: implanting a dopant in a semiconductor substrate; heat treating the semiconductor substrate in an oxidizing ambient to diffuse the dopant for forming diffused regions in the semiconductor substrate; and forming memory cells each including a MOS transistor having the diffused regions as source/drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.