Method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
US7338888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2004 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Jul 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device (100), among other possible steps, includes forming a polysilicon gate electrode over a substrate (110) and forming source/drain regions (170) in the substrate (110) proximate the polysilicon gate electrode. The method further includes forming a blocking layer (180) over the source/drain regions (170), the blocking layer (180) comprising a metal silicide, and siliciding the polysilicon gate electrode to form a silicided gate electrode (150).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.