Method for forming tungsten nitride film
US7338900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2005 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Mar 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate 5, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.