Micro-etching method to replicate alignment marks for semiconductor wafer photolithography
US7338909B2 · kind B2 · utility
1Cited by
3References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2004 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Jun 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for locally etching a substrate area the method including providing a substrate comprising a process surface; depositing a material layer over the process surface; and, applying a wet etchant to cover a targeted etching portion of the process surface while excluding an adjacent surrounding area to selectively etch the material layer overlying the targeted etching portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.