Technique for providing a segmented electrostatic lens in an ion implanter
US7339179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2006 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Jul 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.