Transistor structures

US7339187B2 · kind B2 · utility

Assignee

• State of Oregon acting by and through the State Board of Higher Ed. on Behalf of Oregon State Univ. · US

Inventors

• John Wager · Corvallis, US
• Randy Hoffman · Corvallis, US

Key dates

• Filing date: Jan 24, 2003
• Grant date: Mar 4, 2008
• Expiry date: Feb 9, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO2 or In2O3, the substantially insulating ZnO, SnO2, or In2O3 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.