Semiconductor device having multiple lateral channels and method of forming the same
US7339208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2005 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | May 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a first lateral channel above the conductive substrate and a second lateral channel above the first lateral channel. The semiconductor device further includes a second contact above the second lateral channel. The semiconductor device still further includes an interconnect that connects the first and second lateral channels to the conductive substrate operable to provide a low resistance coupling between the first contact and the first and second lateral channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.