Methods and apparatus for inducing stress in a semiconductor device
US7339214B2 · kind B2 · utility
0Cited by
28References
13Claims
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Assignee
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Key dates
| Filing date | Sep 7, 2004 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Jan 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An electrical device is formed at least partially in the second region, wherein the induced stress therein may improve one or more operational characteristics of the device, such as channel region carrier mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.