Non-volatile semiconductor memory device
US7339833B2 · kind B2 · utility
3Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2006 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Jul 7, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0491
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Using charges accumulated in a capacitance element connected to a drain side node of a memory cell, data is written in accordance with source side injection method. The capacitance value of the capacitance element is changed in accordance with the value of write data. A non-volatile semiconductor memory device allowing writing of multi-valued data at high speed with high precision is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.