Integrated optoelectronic device and method of fabricating the same
US7340142B1 · kind B1 · utility
2Cited by
1References
14Claims
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Key dates
| Filing date | Feb 2, 2007 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Feb 2, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0157
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.