Patent · US Expired

Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers

US7341787B2 · kind B2 · utility

4Cited by

6References

8Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Rupert Krautbauer · Wilster, DE
Erich Gmeilbauer · St. Pantaleon, AT
Robert Vorbuchner · Burghausen, DE
Martin Weber · Borgo San Lazzaro, DE

Key dates

Filing date	Jan 26, 2005
Grant date	Mar 11, 2008
Priority date	—
Expiry date	Jul 2, 2025

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/21
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.