Method for forming an opto-electronic device
US7341882B2 · kind B2 · utility
4Cited by
2References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2003 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12159
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming an opto-electronic device through low temperature processes is provided. An active layer is bonded to a substrate by a common adhesive to maintain or increase the luminous efficiency of the opto-electronic because the electric conductive elements of the opto-electronic are formed on the active layer by a solid phase regrowth process through a low temperature processe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.