Method and apparatus for electron-beam lithography
US7342241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2005 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Aug 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31793
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is to provide an electron-beam lithography method and an electron-beam lithography apparatus that can draw patterns with a high precision despite a change in barometric pressure, can ensure a satisfactory throughput, and are inexpensive. In the electron-beam lithography method that uses an electron beam to draw patterns on a sample, a difference between a current measured barometric pressure and a previous measured barometric pressure, and an elapsed time between their barometric pressure-measurement points in time are determined. When the rate of the difference of their barometric pressures with respect to the elapsed time is equal to or larger than a prescribed barometric pressure change rate value, a drawing precision is calibrated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.