Semiconductor device having super junction structure and method for manufacturing the same
US7342422B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2006 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Aug 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.