Program and program verify operations for flash memory
US7342830B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2006 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | May 4, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a nonvolatile memory array including an array of memory cells, each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region, includes performing a program operation on a group of memory cells, where the group of memory cells includes a plurality of subgroups. A verify status value is stored for each subgroup, the verify status value indicating a verify status of each subgroup, wherein the verify status value indicates whether an associated subgroup has been program verified. A program verify operation is performed on a selected subgroup when the verify status value associated with the selected subgroup indicates that the selected verify subgroup has not been program verified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.