CMOS transistor and method of manufacture thereof
US7344934B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Jun 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A CMOS device with transistors having different gate dielectric materials and a method of manufacture thereof. An aluminum-based material is used as a gate dielectric material of a PMOS device, and a hafnium-based material is used as a gate dielectric material of an NMOS device. A thin layer of silicon a few monolayers or a sub-monolayer thick is formed over the gate dielectric materials, before forming the gates. The thin layer of silicon bonds with the gate dielectric material and pins the work function of the transistors. A gate material that may comprise a metal in one embodiment is deposited over the thin layer of silicon. A CMOS device having a symmetric Vt for the PMOS and NMOS FETs is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.