Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications

US7344958B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Universitaet Bremen · DE
• Japan Science and Technology Agency · JP

Inventors

• Akihiko Murai · Goleta, US
• Lee McCarthy · Lompoc, US
• Umesh Mishra · Montecito, US
• Steven P. DenBaars · Goleta, US
• Carsten Kruse · Troisdorf, DE
• Stephan Figge · Bremen, DE
• Detlef Hommel · Bremen, DE

Key dates

• Filing date: Jul 6, 2005
• Grant date: Mar 18, 2008
• Expiry date: Dec 30, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/018
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.