Lee McCarthy
8Patents
6h-index
14Co-inventors
52Inventor score
Filing activity: Jul 6, 2005 → Apr 25, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8742459B2 | High voltage III-nitride semiconductor devices | Electricity | 29 | Active |
| US7719020B2 | (Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method | Electricity | 20 | Active |
| US7344958B2 | Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications | Electricity | 15 | Expired |
| US9257547B2 | III-N device structures having a non-insulating substrate | Electricity | 12 | Active |
| US9293561B2 | High voltage III-nitride semiconductor devices | Electricity | 10 | Active |
| US8334151B2 | Method for fabricating a direct wafer bonded optoelectronic device | Electricity | 7 | Active |
| US8558285B2 | Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials | Electricity | 3 | Active |
| US9096939B2 | Electrolysis transistor | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.