Method for forming an electrode
US7344967B2 · kind B2 · utility
1Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Sep 29, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor light-emitting device, a buffer layer, a un-doped GaN layer, a high carrier concentration n+-layer, an n-type layer, an emission layer, a p-type layer, and a p-type contact layer are deposited in sequence on a sapphire substrate. The semiconductor light-emitting device includes a light-transparent electrode made of indium tin oxide (ITO) which is deposited in the low pressure vacuum chamber flowing at least oxygen gas through electron beam deposition or ion plating treatment, and a thermal process is carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.