Photosensitive dielectric layer
US7344972B2 · kind B2 · utility
9Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2004 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Oct 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a layer of photosensitive material that may be directly patterned. The photosensitive material may then be decomposed to leave voids or air gaps in the layer. This may provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.