Plating solution, semiconductor device and method for manufacturing the same
US7344986B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2002 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Apr 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a plating solution useful for forming embedded interconnects by embedding a conductive material in fine recesses for interconnects provided in the surface of a substrate, such as a semiconductor substrate, or for forming a protective layer for protecting the surface of embedded interconnects, a semiconductor device manufactured by using the plating solution and a method for manufacturing the semiconductor device. The plating solution contains copper ions, metal ions of a metal, and the metal is capable of forming with copper a copper alloy in which the metal does not form a solid solution with copper, a complexing agent, and a reducing agent free from alkali metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.