Gate dielectric having a flat nitrogen profile and method of manufacture therefor
US7345001B2 · kind B2 · utility
1Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2004 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Jun 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer (410) on a substrate (310), and subjecting the gate dielectric layer (410) to a nitrogen containing plasma process (510), wherein the nitrogen containing plasma process (510) has a ratio of helium to nitrogen of 3:1 or greater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.